Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
Abstract
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 978685
- Patent Number(s):
- 7670933
- Application Number:
- 11/866,748
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wang, George T, Li, Qiming, and Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States: N. p., 2010.
Web.
Wang, George T, Li, Qiming, & Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States.
Wang, George T, Li, Qiming, and Creighton, J Randall. Tue .
"Nanowire-templated lateral epitaxial growth of non-polar group III nitrides". United States. https://www.osti.gov/servlets/purl/978685.
@article{osti_978685,
title = {Nanowire-templated lateral epitaxial growth of non-polar group III nitrides},
author = {Wang, George T and Li, Qiming and Creighton, J Randall},
abstractNote = {A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 02 00:00:00 EST 2010},
month = {Tue Mar 02 00:00:00 EST 2010}
}
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