Method and apparatus for forming conformal SiN.sub.x films
Abstract
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
- Inventors:
-
- Littleton, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 920890
- Patent Number(s):
- 7300890
- Application Number:
- 10/621,712
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wang, Qi. Method and apparatus for forming conformal SiN.sub.x films. United States: N. p., 2007.
Web.
Wang, Qi. Method and apparatus for forming conformal SiN.sub.x films. United States.
Wang, Qi. Tue .
"Method and apparatus for forming conformal SiN.sub.x films". United States. https://www.osti.gov/servlets/purl/920890.
@article{osti_920890,
title = {Method and apparatus for forming conformal SiN.sub.x films},
author = {Wang, Qi},
abstractNote = {A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 27 00:00:00 EST 2007},
month = {Tue Nov 27 00:00:00 EST 2007}
}
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Works referenced in this record:
Coverage properties of silicon nitride film prepared by the Cat-CVD method
journal, April 2003
- Osono, S.; Uchiyama, Y.; Kitazoe, M.
- Thin Solid Films, Vol. 430, Issue 1-2