Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices
Abstract
A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 908537
- Patent Number(s):
- 7019311
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Horn, Kevin M. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices. United States: N. p., 2006.
Web.
Horn, Kevin M. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices. United States.
Horn, Kevin M. Tue .
"Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices". United States. https://www.osti.gov/servlets/purl/908537.
@article{osti_908537,
title = {Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices},
author = {Horn, Kevin M},
abstractNote = {A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EST 2006},
month = {Tue Mar 28 00:00:00 EST 2006}
}
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Works referenced in this record:
Enhanced damage in linear bipolar integrated circuits at low dose rate
journal, January 1995
- Johnston, A. H.; Rax, B. G.; Lee, C. I.
- IEEE Transactions on Nuclear Science, Vol. 42, Issue 6
Single-event transient (SET) characterization of an LM119 voltage comparator: an approach to SET model validation using a pulsed laser
journal, June 2002
- Buchner, S.; McMorrow, D.; Sternberg, A.
- IEEE Transactions on Nuclear Science, Vol. 49, Issue 3
Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth
journal, July 1998
- Melinger, Joseph S.; McMorrow, Dale; Campbell, A. B.
- Journal of Applied Physics, Vol. 84, Issue 2
Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation
journal, December 2002
- Pease, R. L.; Sternberg, A. L.; Boulghassoul, Y.
- IEEE Transactions on Nuclear Science, Vol. 49, Issue 6
Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelengths
journal, December 2002
- Chugg, A. M.; Jones, R.; Moutrie, M.
- IEEE Transactions on Nuclear Science, Vol. 49, Issue 6
Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser
journal, December 1994
- Buchner, S.; Langworthy, J. B.; Stapor, W. J.
- IEEE Transactions on Nuclear Science, Vol. 41, Issue 6
Charge collection from focussed picosecond laser pulses
journal, January 1988
- Buchner, S.; Knudson, A.; Kang, K.
- IEEE Transactions on Nuclear Science, Vol. 35, Issue 6
Effect of aging on radiation response of bipolar transistors
journal, January 2001
- Pershenkov, V. S.; Slesarev, A. Y.; Sogoyan, A. V.
- IEEE Transactions on Nuclear Science, Vol. 48, Issue 6
Surface and bulk ultrashort-pulsed laser processing of transparent materials
conference, November 2000
- Hertel, Ingolf V.; Stoian, Razvan; Ashkenasi, David
- First International Symposium on Laser Precision Microfabrication (LPM2000), SPIE Proceedings
Mapping of Defect-Related Silicon Properties with the ELYMAT Technique in Three Dimensions
journal, September 1994
- Carstensen, J.; Lippik, W.; Föll, H.
- Materials Science Forum, Vol. 173-174
Influence of temperature on dose rate laser simulation adequacy
journal, January 2000
- Skorobogatov, P. K.; Nikiforov, A. Y.; Demidov, A. A.
- IEEE Transactions on Nuclear Science, Vol. 47, Issue 6
Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials
journal, November 1999
- Kalinushkin, V. P.; Yuryev, V. A.; Astafiev, O. V.
- Review of Scientific Instruments, Vol. 70, Issue 11
Aging and baking effects on the radiation hardness of MOS capacitors
journal, January 2001
- Karmarkar, A. P.; Choi, B. K.; Schrimpf, R. D.
- IEEE Transactions on Nuclear Science, Vol. 48, Issue 6
Charge generation and collection in p-n junctions excited with pulsed infrared lasers
journal, January 1993
- Johnston, A. H.
- IEEE Transactions on Nuclear Science, Vol. 40, Issue 6