Voltage-Matched, Monolithic, Multi-Band-Gap Devices
Abstract
Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 894202
- Patent Number(s):
- 7095050
- Application Number:
- TRN: US200701%%60
- Assignee:
- NREL
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; DESIGN; ENERGY GAP; VOLTAGE-MATCHED; MONOLITHIC; MULTI-BAND-GAP DEVICES; Solar Energy - Photovoltaics; Basic Sciences; Materials Science and Semiconductors
Citation Formats
Wanlass, M W, and Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices. United States: N. p., 2006.
Web.
Wanlass, M W, & Mascarenhas, A. Voltage-Matched, Monolithic, Multi-Band-Gap Devices. United States.
Wanlass, M W, and Mascarenhas, A. Tue .
"Voltage-Matched, Monolithic, Multi-Band-Gap Devices". United States.
@article{osti_894202,
title = {Voltage-Matched, Monolithic, Multi-Band-Gap Devices},
author = {Wanlass, M W and Mascarenhas, A},
abstractNote = {Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 22 00:00:00 EDT 2006},
month = {Tue Aug 22 00:00:00 EDT 2006}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.