Ultrathin Dielectric Oxide Films On Silicon

Klemperer, Walter G; Lee, Jason; Mikalsen, Erik A; Payne, David A

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Title: Ultrathin Dielectric Oxide Films On Silicon

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Abstract

A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

Inventors:

Klemperer, Walter G ^[1]; Lee, Jason ^[2]; Mikalsen, Erik A ^[3]; Payne, David A ^[1]

Champaign, IL
Liverpool, GB
Urbana, IL

Issue Date:: Tue Sep 21 00:00:00 EDT 2004

Research Org.:: University of Ilinois

OSTI Identifier:: 879962

Patent Number(s):: 6794315

Application Number:: 10/384186

Assignee:: Board of Trustees of the University of Illinois (Urbana, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/04 - Pretreatment of the material to be coated
C23C18/1216 - {Metal oxides
C23C18/1225 - {Deposition of multilayers of inorganic material}
C23C18/1275 - {performed under inert atmosphere}
C23C18/143 - {Radiation by light, e.g. photolysis or pyrolysis}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02189 - {the material containing zirconium, e.g. ZrO2}
H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/316 - composed of oxides or glassy oxides or oxide based glass

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DOE Contract Number:: FG02-91ER45439

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, and Payne, David A. Ultrathin Dielectric Oxide Films On Silicon.  United States: N. p., 2004. 
        Web.

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                    Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, & Payne, David A. Ultrathin Dielectric Oxide Films On Silicon.  United States.

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                    Klemperer, Walter G, Lee, Jason, Mikalsen, Erik A, and Payne, David A. Tue .  
        "Ultrathin Dielectric Oxide Films On Silicon".  United States.  https://www.osti.gov/servlets/purl/879962.

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@article{osti_879962,

  title        = {Ultrathin Dielectric Oxide Films On Silicon},

  author       = {Klemperer, Walter G and Lee, Jason and Mikalsen, Erik A and Payne, David A},

  abstractNote = {A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Sep 21 00:00:00 EDT 2004},

  month        = {Tue Sep 21 00:00:00 EDT 2004}

}

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