M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features
Abstract
Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, andmore »
- Inventors:
-
- Albuquerque, NM
- Los Gatos, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 879258
- Patent Number(s):
- 5759744
- Application Number:
- 08/407067
- Assignee:
- University of New Mexico (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, and Devine, Daniel J. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features. United States: N. p., 1998.
Web.
Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, & Devine, Daniel J. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features. United States.
Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, and Devine, Daniel J. Tue .
"M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features". United States. https://www.osti.gov/servlets/purl/879258.
@article{osti_879258,
title = {M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features},
author = {Brueck, Steven R.J. and Chen, Xiaolan and Zaidi, Saleem and Devine, Daniel J},
abstractNote = {Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 02 00:00:00 EDT 1998},
month = {Tue Jun 02 00:00:00 EDT 1998}
}
Works referenced in this record:
Generalized approach toward modeling resist performance
journal, December 1991
- Ziger, David H.; Mack, Chris A.
- AIChE Journal, Vol. 37, Issue 12