Pulsed energy synthesis and doping of silicon carbide
Abstract
A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 87737
- Patent Number(s):
- 5425860
- Application Number:
- PAN: 8-043,820
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 20 Jun 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON CARBIDES; CRYSTAL DOPING; FABRICATION; LASER RADIATION; USES; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICES; SOLAR CELL ARRAYS
Citation Formats
Truher, J B, Kaschmitter, J L, Thompson, J B, and Sigmon, T W. Pulsed energy synthesis and doping of silicon carbide. United States: N. p., 1995.
Web.
Truher, J B, Kaschmitter, J L, Thompson, J B, & Sigmon, T W. Pulsed energy synthesis and doping of silicon carbide. United States.
Truher, J B, Kaschmitter, J L, Thompson, J B, and Sigmon, T W. Tue .
"Pulsed energy synthesis and doping of silicon carbide". United States.
@article{osti_87737,
title = {Pulsed energy synthesis and doping of silicon carbide},
author = {Truher, J B and Kaschmitter, J L and Thompson, J B and Sigmon, T W},
abstractNote = {A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 20 00:00:00 EDT 1995},
month = {Tue Jun 20 00:00:00 EDT 1995}
}