High average power pockels cell
Abstract
A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.
- Inventors:
-
- Pleasanton, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 875261
- Patent Number(s):
- H000868
- Application Number:
- 06/827703
- Assignee:
- United States of America as represented by United States (Washington, DC)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1986 Feb 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- statutory invention registration; average; power; pockels; cell; disclosed; reduces; effect; thermally; induced; strains; laser; technology; elongated; substantially; rectangular; crystalline; structure; formed; kdp-type; material; eliminate; shear; x-; y-axes; oriented; perpendicular; edges; crystal; cross-section; c-axis; direction; propagation; thermally induced; structure formed; substantially perpendicular; average power; power laser; crystalline structure; pockels cell; substantially rectangular; oriented substantially; p-type material; induced strains; type material; power pockels; laser technology; line structure; /359/372/
Citation Formats
Daly, Thomas P. High average power pockels cell. United States: N. p., 1991.
Web.
Daly, Thomas P. High average power pockels cell. United States.
Daly, Thomas P. Tue .
"High average power pockels cell". United States. https://www.osti.gov/servlets/purl/875261.
@article{osti_875261,
title = {High average power pockels cell},
author = {Daly, Thomas P.},
abstractNote = {A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}
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