Wafer-fused semiconductor radiation detector
Abstract
Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode andmore »
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874253
- Patent Number(s):
- 6350989
- Assignee:
- Sandia National Laboratories (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- wafer-fused; semiconductor; radiation; detector; useful; gamma-ray; x-ray; spectrometers; imaging; systems; fabricated; wafer; fusion; insert; electrically; conductive; grid; typically; comprising; metal; solid; pieces; cathode; negative; electrode; anode; positive; fused; functions; commonly; frisch; inserted; vacuum; materials; sizes; thicknesses; utilize; wide; range; metals; conducting; form; optimize; performance; constrained; structural; dissimilarity; individual; basically; formed; example; etching; spaced; grooves; partially; filling; selected; electrical; conductor; forms; fusing; grooved; piece; opposite; electrically conductive; semiconductor material; positive electrode; negative electrode; radiation detector; wide range; electrically conducting; conducting material; x-ray spectrometer; imaging systems; /250/257/
Citation Formats
Lee, Edwin Y, and James, Ralph B. Wafer-fused semiconductor radiation detector. United States: N. p., 2002.
Web.
Lee, Edwin Y, & James, Ralph B. Wafer-fused semiconductor radiation detector. United States.
Lee, Edwin Y, and James, Ralph B. Tue .
"Wafer-fused semiconductor radiation detector". United States. https://www.osti.gov/servlets/purl/874253.
@article{osti_874253,
title = {Wafer-fused semiconductor radiation detector},
author = {Lee, Edwin Y and James, Ralph B},
abstractNote = {Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}
Works referenced in this record:
Device Simulation of a Unipolar Gamma-Ray Detector
journal, January 1997
- Lee, E. Y.; Lund, J. C.; Hilton, N. R.
- MRS Proceedings, Vol. 487
Single‐polarity charge sensing in ionization detectors using coplanar electrodes
journal, November 1994
- Luke, P. N.
- Applied Physics Letters, Vol. 65, Issue 22