Oriented conductive oxide electrodes on SiO2/Si and glass
Abstract
A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.
- Inventors:
-
- Los Alamos, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 874103
- Patent Number(s):
- 6312819
- Assignee:
- The Regents of the University of California (Los Alamos, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- oriented; conductive; oxide; electrodes; sio2si; glass; film; structure; provided; including; silicon; substrate; layer; dioxide; surface; cubic; material; deposited; ion-beam-assisted-deposition; characterized; biaxially; yttria-stabilized; zirconia; additional; layers; ruthenium; lanthanum; strontium; cobalt; intermediate; cerium; employed; barium; titanium; method; forming; structures; temperature; deposition; dioxidesilicon; oxide layer; silicon substrate; conductive oxide; oxide electrode; /428/117/
Citation Formats
Jia, Quanxi, and Arendt, Paul N. Oriented conductive oxide electrodes on SiO2/Si and glass. United States: N. p., 2001.
Web.
Jia, Quanxi, & Arendt, Paul N. Oriented conductive oxide electrodes on SiO2/Si and glass. United States.
Jia, Quanxi, and Arendt, Paul N. Mon .
"Oriented conductive oxide electrodes on SiO2/Si and glass". United States. https://www.osti.gov/servlets/purl/874103.
@article{osti_874103,
title = {Oriented conductive oxide electrodes on SiO2/Si and glass},
author = {Jia, Quanxi and Arendt, Paul N},
abstractNote = {A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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