Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage
Abstract
A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.
- Inventors:
-
- Hinsdale, IL
- Oak Park, IL
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- OSTI Identifier:
- 873921
- Patent Number(s):
- 6272036
- Assignee:
- University of Chicago (Chicago, IL)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- control; magnetic; direction; multi-layer; ferromagnetic; devices; bias; voltage; controlling; magnetization; materials; comprising; device; layers; disposed; combine; form; interlayer; exchange; coupling; insulating; layer; spacer; located; direct; applied; causing; change; occurs; absence; external; field; ferromagnetic layers; magnetic layer; magnetic field; bias voltage; insulating layer; materials comprising; external magnetic; ferromagnetic layer; spacer layer; magnetic devices; magnetic device; /365/
Citation Formats
You, Chun-Yeol, and Bader, Samuel D. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage. United States: N. p., 2001.
Web.
You, Chun-Yeol, & Bader, Samuel D. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage. United States.
You, Chun-Yeol, and Bader, Samuel D. Mon .
"Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage". United States. https://www.osti.gov/servlets/purl/873921.
@article{osti_873921,
title = {Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage},
author = {You, Chun-Yeol and Bader, Samuel D},
abstractNote = {A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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