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Title: Semiconductor assisted metal deposition for nanolithography applications

Abstract

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [2]
  1. Naperville, IL
  2. Downers Grove, IL
  3. Belgrade, YU
  4. West Brooklyn, IL
  5. Elmhurst, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
OSTI Identifier:
873915
Patent Number(s):
6271130
Assignee:
University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82B - NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; assisted; metal; deposition; nanolithography; applications; article; manufacture; method; forming; nanoparticle; sized; material; components; oxide; substrate; nanoparticles; modifier; deposited; source; association; enabling; electronic; scavenging; chelation; illuminated; reduction; oxide substrate; particle size; metal deposition; semiconductor oxide; metal deposit; /438/257/

Citation Formats

Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M, Skubal, Laura R, Tiede, David M, and Thurnauer, Marion. Semiconductor assisted metal deposition for nanolithography applications. United States: N. p., 2001. Web.
Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M, Skubal, Laura R, Tiede, David M, & Thurnauer, Marion. Semiconductor assisted metal deposition for nanolithography applications. United States.
Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M, Skubal, Laura R, Tiede, David M, and Thurnauer, Marion. Mon . "Semiconductor assisted metal deposition for nanolithography applications". United States. https://www.osti.gov/servlets/purl/873915.
@article{osti_873915,
title = {Semiconductor assisted metal deposition for nanolithography applications},
author = {Rajh, Tijana and Meshkov, Natalia and Nedelijkovic, Jovan M and Skubal, Laura R and Tiede, David M and Thurnauer, Marion},
abstractNote = {An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}