Method for making surfactant-templated, high-porosity thin films
Abstract
An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.
- Inventors:
-
- Albuquerque, NM
- San Jose, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873911
- Patent Number(s):
- 6270846
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; surfactant-templated; high-porosity; films; evaporation-induced; self-assembly; prepare; film; mixing; silica; sol; surfactant; hydrophobic; polymer; evaporating; portion; solvent; coating; substrate; heating; form; liquid-phase; material; porosity; approximately; 50; percent; dielectric; constants; suitable; applications; requiring; low-dielectric; interstitial; compound; added; mixture; covalently; bonded; pores; physically; entrapped; porous; structure; selection; provides; means; developing; including; membranes; sensors; constant; photonic; materials; optical; hosts; dielectric constants; silica sol; applications including; applications requiring; dielectric constant; porous structure; film material; covalently bonded; hydrophobic polymer; including membrane; /427/
Citation Formats
Brinker, C Jeffrey, Lu, Yunfeng, and Fan, Hongyou. Method for making surfactant-templated, high-porosity thin films. United States: N. p., 2001.
Web.
Brinker, C Jeffrey, Lu, Yunfeng, & Fan, Hongyou. Method for making surfactant-templated, high-porosity thin films. United States.
Brinker, C Jeffrey, Lu, Yunfeng, and Fan, Hongyou. Mon .
"Method for making surfactant-templated, high-porosity thin films". United States. https://www.osti.gov/servlets/purl/873911.
@article{osti_873911,
title = {Method for making surfactant-templated, high-porosity thin films},
author = {Brinker, C Jeffrey and Lu, Yunfeng and Fan, Hongyou},
abstractNote = {An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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