Semiconductor P-I-N detector
Abstract
A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.
- Inventors:
-
- 53 Timber Line Dr., Nashua, NH 03062
- 577 Lowell St., Lexington, MA 02173
- Issue Date:
- Research Org.:
- Spire Corp., Bedford, MA (United States)
- OSTI Identifier:
- 873828
- Patent Number(s):
- 6255708
- Assignee:
- Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062);Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FG02-94ER81869
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; p-i-n; detector; including; intrinsic; wafer; p-doped; layer; n-doped; boundary; reducing; diffusion; dopants; positioned; doped; regions; composed; cdznte; cdte; znte; copper; cds; indium; layers; formed; undoped; material; deposited; underlying; typically; deposition; process; doping; section; intrinsic wafer; semiconductor material; deposition process; boundary layer; doped layer; boundary layers; doped regions; semiconductor p-i-n; detector including; p-i-n detector; /257/250/
Citation Formats
Sudharsanan, Rengarajan, and Karam, Nasser H. Semiconductor P-I-N detector. United States: N. p., 2001.
Web.
Sudharsanan, Rengarajan, & Karam, Nasser H. Semiconductor P-I-N detector. United States.
Sudharsanan, Rengarajan, and Karam, Nasser H. Mon .
"Semiconductor P-I-N detector". United States. https://www.osti.gov/servlets/purl/873828.
@article{osti_873828,
title = {Semiconductor P-I-N detector},
author = {Sudharsanan, Rengarajan and Karam, Nasser H},
abstractNote = {A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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Works referenced in this record:
Low noise gamma-ray and X-ray detectors based on CdTe-materials
journal, August 1996
- Åbro, E.; Johansen, G. A.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3
Large, High Resolution CdTe Gamma Ray Sensors
journal, January 1986
- Hazlett, T.; Cole, H.; Squillante, M. R.
- IEEE Transactions on Nuclear Science, Vol. 33, Issue 1
Gamma ray detectors with HgCdTe contact layers
journal, February 1985
- Ryan, F. J.; Shin, S. H.; Edwall, D. D.
- Applied Physics Letters, Vol. 46, Issue 3
Cd/sub 1-x/Zn/sub x/Te gamma ray detectors
journal, January 1992
- Butler, J. F.; Lingren, C. L.; Doty, F. P.
- IEEE Transactions on Nuclear Science, Vol. 39, Issue 4
Recent progress in Cd1−xZnxTe radiation detectors
journal, August 1996
- Parnham, Kevin B.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3