Method for mask repair using defect compensation
Abstract
A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.
- Inventors:
-
- San Ramon, CA
- Livermore, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873751
- Patent Number(s):
- 6235434
- Assignee:
- EUV LLC (Santa Clara, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; mask; repair; defect; compensation; amplitude; phase; defects; lithographic; masks; involves; modifying; altering; portion; absorber; pattern; surface; blank; proximate; compensate; local; disturbance; optical; field; due; lithographic masks; method involves; method involve; field due; involves modifying; phase defect; lithographic mask; /430/
Citation Formats
Sweeney, Donald W, and Ray-Chaudhuri, Avijit K. Method for mask repair using defect compensation. United States: N. p., 2001.
Web.
Sweeney, Donald W, & Ray-Chaudhuri, Avijit K. Method for mask repair using defect compensation. United States.
Sweeney, Donald W, and Ray-Chaudhuri, Avijit K. Mon .
"Method for mask repair using defect compensation". United States. https://www.osti.gov/servlets/purl/873751.
@article{osti_873751,
title = {Method for mask repair using defect compensation},
author = {Sweeney, Donald W and Ray-Chaudhuri, Avijit K},
abstractNote = {A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Repair of opaque defects on reflection masks for soft x-ray projection lithography
journal, November 1992
- Hawryluk, Andrew M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 6