Oxide-based method of making compound semiconductor films and making related electronic devices
Abstract
A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than aboutmore »
- Inventors:
-
- Tarzana, CA
- Manhattan Beach, CA
- Woodland Hills, CA
- Glendale, CA
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 873283
- Patent Number(s):
- 6127202
- Assignee:
- International Solar Electronic Technology, Inc. (Inglewood, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- oxide-based; method; compound; semiconductor; films; related; electronic; devices; forming; film; steps; preparing; source; material; depositing; base; preparatory; heating; suitable; atmosphere; form; precursor; providing; oxide-containing; particles; including; iiia; elements; non-oxide; ib-iiia-via; oxides; constitute; 95; molar; percent; similarly; non-oxides; ratio; substantially; reduced; prepared; powder; dopant; iib-iva-va; substituted; appropriate; substitutions; applicable; fabrication; solar; cells; semiconductor film; precursor film; suitable material; molar ratio; source material; solar cell; solar cells; compound semiconductor; electronic devices; compound film; powder form; molar percent; semiconductor films; articles including; containing particles; electronic device; related electronic; based method; /438/257/
Citation Formats
Kapur, Vijay K, Basol, Bulent M, Leidholm, Craig R, and Roe, Robert A. Oxide-based method of making compound semiconductor films and making related electronic devices. United States: N. p., 2000.
Web.
Kapur, Vijay K, Basol, Bulent M, Leidholm, Craig R, & Roe, Robert A. Oxide-based method of making compound semiconductor films and making related electronic devices. United States.
Kapur, Vijay K, Basol, Bulent M, Leidholm, Craig R, and Roe, Robert A. Sat .
"Oxide-based method of making compound semiconductor films and making related electronic devices". United States. https://www.osti.gov/servlets/purl/873283.
@article{osti_873283,
title = {Oxide-based method of making compound semiconductor films and making related electronic devices},
author = {Kapur, Vijay K and Basol, Bulent M and Leidholm, Craig R and Roe, Robert A},
abstractNote = {A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
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