Epoxy bond and stop etch fabrication method
Abstract
A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.
- Inventors:
-
- Sandia Park, NM
- Pleasanton, CA
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873192
- Patent Number(s):
- 6110393
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- epoxy; bond; stop; etch; fabrication; method; ebase; microelectronic; techniques; disclosed; essence; grow; circuit; components; top; layer; grown; substrate; host; bonded; attached; bonding; agent; removed; chemical; physical; etching; process; resistant; methods; allow; access; regions; device; structure; blocked; presence; particular; utility; ultrafast; electronic; optoelectronic; devices; circuits; circuit component; microelectronic fabrication; stop etch; fabrication method; bonding agent; etching process; electronic devices; circuit components; fabrication techniques; particular utility; allow access; electronic device; fabrication methods; epoxy bond; optoelectronic device; layer grown; /216/204/438/
Citation Formats
Simmons, Jerry A, Weckwerth, Mark V, and Baca, Wes E. Epoxy bond and stop etch fabrication method. United States: N. p., 2000.
Web.
Simmons, Jerry A, Weckwerth, Mark V, & Baca, Wes E. Epoxy bond and stop etch fabrication method. United States.
Simmons, Jerry A, Weckwerth, Mark V, and Baca, Wes E. Sat .
"Epoxy bond and stop etch fabrication method". United States. https://www.osti.gov/servlets/purl/873192.
@article{osti_873192,
title = {Epoxy bond and stop etch fabrication method},
author = {Simmons, Jerry A and Weckwerth, Mark V and Baca, Wes E},
abstractNote = {A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}