High resolution three-dimensional doping profiler
Abstract
A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.
- Inventors:
-
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 872778
- Patent Number(s):
- 6005400
- Assignee:
- Lockheed Martin Energy Research Corporation (Oakridge, TN)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- resolution; three-dimensional; doping; profiler; semiconductor; provides; schottky; contact; surface; ohmic; contacts; coupled; power; source; establishing; electrical; bias; localized; light; illuminates; induce; photocurrent; changes; accordance; characteristics; illuminated; region; changing; voltage; depth; depletion; layer; varied; provide; dimensional; view; local; properties; electrical bias; power source; light source; ohmic contact; source illuminates; semiconductor doping; doping profile; doping profiler; /324/
Citation Formats
Thundat, Thomas G, and Warmack, Robert J. High resolution three-dimensional doping profiler. United States: N. p., 1999.
Web.
Thundat, Thomas G, & Warmack, Robert J. High resolution three-dimensional doping profiler. United States.
Thundat, Thomas G, and Warmack, Robert J. Fri .
"High resolution three-dimensional doping profiler". United States. https://www.osti.gov/servlets/purl/872778.
@article{osti_872778,
title = {High resolution three-dimensional doping profiler},
author = {Thundat, Thomas G and Warmack, Robert J},
abstractNote = {A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}
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