Method of improving field emission characteristics of diamond thin films

Krauss, Alan R; Gruen, Dieter M

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Title: Method of improving field emission characteristics of diamond thin films

Abstract

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Inventors:

Krauss, Alan R ^[1]; Gruen, Dieter M ^[2]

Naperville, IL
Downer Grove, IL

Issue Date:: Fri Jan 01 00:00:00 EST 1999

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

OSTI Identifier:: 872282

Patent Number(s):: 5902640

Assignee:: University of Chicago (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/0605 - {Carbon}
C23C14/0611 - {Diamond}
C23C14/221 - {Ion beam deposition
C23C16/27 - Diamond only
C23C16/274 - {using microwave discharges}
C23C16/277 - {using other elements in the gas phase besides carbon and hydrogen
C23C16/4481 - {by evaporation using carrier gas in contact with the source material

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/00 - Single-crystal growth by condensing evaporated or sublimed materials
C30B23/002 - {Controlling or regulating}
C30B23/02 - Epitaxial-layer growth
C30B25/105 - {by irradiation or electric discharge}
C30B29/04 - Diamond
C30B29/605 - {Products containing multiple oriented crystallites, e.g. columnar crystallites}
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J9/025 - {of field emission cathodes}

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DOE Contract Number:: W-31109-ENG-38

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; improving; field; emission; characteristics; diamond; films; preparing; improved; properties; film; substrate; atmosphere; hydrogen; molecular; atomic; provided; deposited; form; absorbed; reduce; function; enhance; addition; intergranular; surfaces; electrical; conductivity; treated; microtip; array; flat; panel; display; field emission; electrical conductivity; diamond film; flat panel; panel display; emission characteristics; emission properties; deposited film; improved field; preparing diamond; /427/

Citation Formats


                    Krauss, Alan R, and Gruen, Dieter M. Method of improving field emission characteristics of diamond thin films.  United States: N. p., 1999. 
        Web.

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                    Krauss, Alan R, & Gruen, Dieter M. Method of improving field emission characteristics of diamond thin films.  United States.

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                    Krauss, Alan R, and Gruen, Dieter M. Fri .  
        "Method of improving field emission characteristics of diamond thin films".  United States.  https://www.osti.gov/servlets/purl/872282.

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@article{osti_872282,

  title        = {Method of improving field emission characteristics of diamond thin films},

  author       = {Krauss, Alan R and Gruen, Dieter M},

  abstractNote = {A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jan 01 00:00:00 EST 1999},

  month        = {Fri Jan 01 00:00:00 EST 1999}

}

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Works referenced in this record:

Effects of potassium and lithium metal deposition on the emission characteristics of Spindt-type thin-film field emission microcathode arrays
journal, March 1995

Talin, A. A.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 2
https://doi.org/10.1116/1.587968

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A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.
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Similar Records

Title: Method of improving field emission characteristics of diamond thin films

Abstract

Citation Formats

Effects of potassium and lithium metal deposition on the emission characteristics of Spindt-type thin-film field emission microcathode arrays journal, March 1995

Effects of potassium and lithium metal deposition on the emission characteristics of Spindt-type thin-film field emission microcathode arrays
journal, March 1995