Four cavity efficiency enhanced magnetically insulated line oscillator
Abstract
A four cavity, efficient magnetically insulated line oscillator (C4-E MILO) having seven vanes and six cavities formed within a tube-like structure surrounding a cathode. The C4-E MILO has a primary slow wave structure which is comprised of four vanes and the four cavities located near a microwave exit end of the tube-like structure. The primary slow wave structure is the four cavity (C4) portion of the magnetically insulated line oscillator (MILO). An RF choke is provided which is comprised of three of the vanes and two of the cavities. The RF choke is located near a pulsed power source portion of the tube-like structure surrounding the cathode. The RF choke increases feedback in the primary slow wave structure, prevents microwaves generated in the primary slow wave structure from propagating towards the pulsed power source and modifies downstream electron current so as to enhance microwave power generation. A beam dump/extractor is located at the exit end of the oscillator tube for extracting microwave power from the oscillator, and in conjunction with an RF extractor vane, which comprises the fourth vane of the primary slow wave structure (nearest the exit) having a larger gap radius than the other vanes of the primarymore »
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 871488
- Patent Number(s):
- 5742209
- Application Number:
- 08/677,542
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- cavity; efficiency; enhanced; magnetically; insulated; line; oscillator; efficient; c4-e; milo; seven; vanes; six; cavities; formed; tube-like; structure; surrounding; cathode; primary; slow; wave; comprised; located; near; microwave; exit; c4; portion; rf; choke; provided; pulsed; power; source; increases; feedback; prevents; microwaves; generated; propagating; towards; modifies; downstream; electron; current; enhance; generation; beam; dump; extractor; tube; extracting; conjunction; vane; comprises; fourth; nearest; larger; gap; radius; sws; uninsulated; flow; returned; anode; region; radiated; disposed; slow wave; waves generated; wave structure; located near; line oscillator; beam dump; electron current; tube-like structure; power source; microwave power; power generation; magnetically insulated; pulsed power; structure surrounding; electron flow; cavities formed; insulated line; enhanced magnetic; c4-e milo; /331/315/
Citation Formats
Lemke, Raymond W, Clark, Miles C, and Calico, Steve E. Four cavity efficiency enhanced magnetically insulated line oscillator. United States: N. p., 1998.
Web.
Lemke, Raymond W, Clark, Miles C, & Calico, Steve E. Four cavity efficiency enhanced magnetically insulated line oscillator. United States.
Lemke, Raymond W, Clark, Miles C, and Calico, Steve E. Tue .
"Four cavity efficiency enhanced magnetically insulated line oscillator". United States. https://www.osti.gov/servlets/purl/871488.
@article{osti_871488,
title = {Four cavity efficiency enhanced magnetically insulated line oscillator},
author = {Lemke, Raymond W and Clark, Miles C and Calico, Steve E},
abstractNote = {A four cavity, efficient magnetically insulated line oscillator (C4-E MILO) having seven vanes and six cavities formed within a tube-like structure surrounding a cathode. The C4-E MILO has a primary slow wave structure which is comprised of four vanes and the four cavities located near a microwave exit end of the tube-like structure. The primary slow wave structure is the four cavity (C4) portion of the magnetically insulated line oscillator (MILO). An RF choke is provided which is comprised of three of the vanes and two of the cavities. The RF choke is located near a pulsed power source portion of the tube-like structure surrounding the cathode. The RF choke increases feedback in the primary slow wave structure, prevents microwaves generated in the primary slow wave structure from propagating towards the pulsed power source and modifies downstream electron current so as to enhance microwave power generation. A beam dump/extractor is located at the exit end of the oscillator tube for extracting microwave power from the oscillator, and in conjunction with an RF extractor vane, which comprises the fourth vane of the primary slow wave structure (nearest the exit) having a larger gap radius than the other vanes of the primary SWS, comprises an RF extractor. Uninsulated electron flow is returned downstream towards the exit along an anode/beam dump region located between the beam dump/extractor and the exit where the RF is radiated at said RF extractor vane located near the exit and the uninsulated electron flow is disposed at the beam dump/extractor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 21 00:00:00 EDT 1998},
month = {Tue Apr 21 00:00:00 EDT 1998}
}
Works referenced in this record:
Simulated behavior of the magnetically insulated oscillator
journal, February 1989
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- Journal of Applied Physics, Vol. 65, Issue 3
Experiments on a current‐toggled plasma‐opening switch
journal, April 1992
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Magnetically insulated transmission line oscillator
journal, January 1988
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