Process for growing a film epitaxially upon a MgO surface
Abstract
A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 871254
- Patent Number(s):
- 5693140
- Assignee:
- Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; growing; film; epitaxially; mgo; surface; structure; optical; quality; perovskites; batio; srtio; grown; single; crystal; substrate; involves; epitaxial; build; alternating; planes; metal; oxide; plane; layering; sequence; involved; reduces; otherwise; result; interfacial; electrostatics; atomic; layers; oxides; stabilized; commensurate; films; unit; cell; thickness; thicknesses; 5-0; device; applications; atomic layers; cell thickness; sequence involved; crystal quality; layering sequence; device applications; metal oxide; single crystal; optical device; otherwise result; unit cell; optical quality; mgo substrate; epitaxial build; interfacial electrostatics; film build; film epitaxially; quality perovskites; mgo surface; substrate involves; alternating planes; crystal mgo; /117/427/
Citation Formats
McKee, Rodney Allen, and Walker, Frederick Joseph. Process for growing a film epitaxially upon a MgO surface. United States: N. p., 1997.
Web.
McKee, Rodney Allen, & Walker, Frederick Joseph. Process for growing a film epitaxially upon a MgO surface. United States.
McKee, Rodney Allen, and Walker, Frederick Joseph. Wed .
"Process for growing a film epitaxially upon a MgO surface". United States. https://www.osti.gov/servlets/purl/871254.
@article{osti_871254,
title = {Process for growing a film epitaxially upon a MgO surface},
author = {McKee, Rodney Allen and Walker, Frederick Joseph},
abstractNote = {A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}
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Works referenced in this record:
Intrinsic and defect surface states on single‐crystal metal oxides
journal, March 1981
- Henrich, Victor E.; Kurtz, Richard L.
- Journal of Vacuum Science and Technology, Vol. 18, Issue 2