Method and device for predicting wavelength dependent radiation influences in thermal systems
Abstract
A method and apparatus for predicting the spectral (wavelength-dependent) radiation transport in thermal systems including interaction by the radiation with partially transmitting medium. The predicted model of the thermal system is used to design and control the thermal system. The predictions are well suited to be implemented in design and control of rapid thermal processing (RTP) reactors. The method involves generating a spectral thermal radiation transport model of an RTP reactor. The method also involves specifying a desired wafer time dependent temperature profile. The method further involves calculating an inverse of the generated model using the desired wafer time dependent temperature to determine heating element parameters required to produce the desired profile. The method also involves controlling the heating elements of the RTP reactor in accordance with the heating element parameters to heat the wafer in accordance with the desired profile.
- Inventors:
-
- 864 Lucille St., Livermore, CA 94550
- 7329 Stonedale Dr., Pleasanton, CA 94558
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 870737
- Patent Number(s):
- 5583780
- Assignee:
- Kee, Robert J. (864 Lucille St., Livermore, CA 94550);Ting, Aili (7329 Stonedale Dr., Pleasanton, CA 94558)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B24 - GRINDING B24B - MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; device; predicting; wavelength; dependent; radiation; influences; thermal; systems; apparatus; spectral; wavelength-dependent; transport; including; interaction; partially; transmitting; medium; predicted; model; design; control; predictions; suited; implemented; rapid; processing; rtp; reactors; involves; generating; reactor; specifying; desired; wafer; time; temperature; profile; calculating; inverse; generated; determine; heating; element; parameters; required; produce; controlling; elements; accordance; heat; systems including; time dependent; heating elements; temperature profile; thermal radiation; heating element; method involves; rapid thermal; thermal processing; transmitting medium; radiation transport; involves calculating; method involve; wavelength dependent; thermal systems; /700/
Citation Formats
Kee, Robert J, and Ting, Aili. Method and device for predicting wavelength dependent radiation influences in thermal systems. United States: N. p., 1996.
Web.
Kee, Robert J, & Ting, Aili. Method and device for predicting wavelength dependent radiation influences in thermal systems. United States.
Kee, Robert J, and Ting, Aili. Mon .
"Method and device for predicting wavelength dependent radiation influences in thermal systems". United States. https://www.osti.gov/servlets/purl/870737.
@article{osti_870737,
title = {Method and device for predicting wavelength dependent radiation influences in thermal systems},
author = {Kee, Robert J and Ting, Aili},
abstractNote = {A method and apparatus for predicting the spectral (wavelength-dependent) radiation transport in thermal systems including interaction by the radiation with partially transmitting medium. The predicted model of the thermal system is used to design and control the thermal system. The predictions are well suited to be implemented in design and control of rapid thermal processing (RTP) reactors. The method involves generating a spectral thermal radiation transport model of an RTP reactor. The method also involves specifying a desired wafer time dependent temperature profile. The method further involves calculating an inverse of the generated model using the desired wafer time dependent temperature to determine heating element parameters required to produce the desired profile. The method also involves controlling the heating elements of the RTP reactor in accordance with the heating element parameters to heat the wafer in accordance with the desired profile.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
Works referenced in this record:
Simulation of Rapid Thermal Processing Equipment and Processes
journal, January 1993
- Lie, Kun-Ho; Merchant, Tushar P.; Jensen, Klavs F.
- MRS Proceedings, Vol. 303
The influence of wavelength-dependent radiation in simulation of lamp-heated rapid thermal processing systems
report, August 1994
- Ting, A.