Efficient semiconductor light-emitting device and method

Choquette, Kent D; Lear, Kevin L

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Title: Efficient semiconductor light-emitting device and method

Abstract

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Inventors:

Choquette, Kent D ^[1]; Lear, Kevin L ^[1]; Schneider, Jr., Richard P. ^[2]

Albuquerque, NM
(Albuquerque, NM)

Issue Date:: Mon Jan 01 00:00:00 EST 1996

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870308

Patent Number(s):: 5493577

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/105 - {with a resonant cavity structure}
H01L33/145 - {with a current-blocking structure}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S2301/166 - Single transverse or lateral mode
H01S5/18313 - {by oxidizing at least one of the DBR layers}
H01S5/1833 - {with more than one structure}
H01S5/18361 - {Structure of the reflectors, e.g. hybrid mirrors}
H01S5/2205 - {comprising special burying or current confinement layers}
H01S5/3215 - {graded composition cladding layers}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: efficient; semiconductor; light-emitting; device; method; provided; control; layer; region; annular; oxidized; portion; channel; injection; current; active; provide; lateral; refractive; index; profile; guiding; light; generated; periodic; composition; grading; mirror; stacks; provides; reduced; operating; voltage; efficiency; generation; formed; resonant-cavity; diode; rcled; vertical-cavity; surface-emitting; laser; vcsel; cavity surface; surface-emitting laser; emitting diode; operating voltage; light-emitting diode; vertical-cavity surface-emitting; device provides; active region; refractive index; light generated; resonant-cavity light-emitting; semiconductor light-emitting; emitting laser; emitting device; light-emitting device; lateral refractive; index profile; oxidized portion; /372/

Citation Formats


                    Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P. Efficient semiconductor light-emitting device and method.  United States: N. p., 1996. 
        Web.

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                    Choquette, Kent D, Lear, Kevin L, & Schneider, Jr., Richard P. Efficient semiconductor light-emitting device and method.  United States.

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                    Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P. Mon .  
        "Efficient semiconductor light-emitting device and method".  United States.  https://www.osti.gov/servlets/purl/870308.

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@article{osti_870308,

  title        = {Efficient semiconductor light-emitting device and method},

  author       = {Choquette, Kent D and Lear, Kevin L and Schneider, Jr., Richard P.},

  abstractNote = {A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Jan 01 00:00:00 EST 1996},

  month        = {Mon Jan 01 00:00:00 EST 1996}

}

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Works referenced in this record:

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994

Huffaker, D. L.; Shin, J.; Deng, H.
Applied Physics Letters, Vol. 65, Issue 21
https://doi.org/10.1063/1.112589

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Lear, K. L.; Schneider, R. P.; Choquette, K. D.
Electronics Letters, Vol. 30, Issue 24
https://doi.org/10.1049/el:19941421

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
journal, August 1994

Ries, M. J.; Richard, T. A.; Maranowski, S. A.
Applied Physics Letters, Vol. 65, Issue 6
https://doi.org/10.1063/1.112216

Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
journal, May 1990

Lee, Y. H.; Tell, B.; Brown-Goebeler, K.
Electronics Letters, Vol. 26, Issue 11
https://doi.org/10.1049/el:19900463

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994

Zhao, H.; Steier, W. H.; Dapkus, P. D.
Electronics Letters, Vol. 30, Issue 14
https://doi.org/10.1049/el:19940754

Low threshold half-wave vertical-cavity lasers
journal, November 1994

Huffaker, D. L.; Deppe, D. G.; Shin, J.
Electronics Letters, Vol. 30, Issue 23
https://doi.org/10.1049/el:19941348

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994

Lear, K. L.; Schneider, R. P.; Choquette, K. D.
IEEE Photonics Technology Letters, Vol. 6, Issue 9
https://doi.org/10.1109/68.324666

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994

Huffaker, D. L.; Deppe, D. G.; Kumar, K.
Applied Physics Letters, Vol. 65, Issue 1
https://doi.org/10.1063/1.113087

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994

Huffaker, D. L.; Deppe, D. G.; Rogers, T. J.
Applied Physics Letters, Vol. 65, Issue 13
https://doi.org/10.1063/1.112927

Native‐oxide stripe‐geometry Al _x Ga _{1− x} As‐GaAs quantum well heterostructure lasers
journal, January 1991

Dallesasse, J. M.; Holonyak, N.
Applied Physics Letters, Vol. 58, Issue 4
https://doi.org/10.1063/1.104645

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Similar Records

Title: Efficient semiconductor light-emitting device and method

Abstract

Citation Formats

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers journal, November 1994

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal, November 1994

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors journal, August 1994

Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm journal, May 1990

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers journal, July 1994

Low threshold half-wave vertical-cavity lasers journal, November 1994

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy journal, September 1994

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers journal, July 1994

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers journal, September 1994

Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers journal, January 1991

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
journal, August 1994

Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
journal, May 1990

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994

Low threshold half-wave vertical-cavity lasers
journal, November 1994

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994

Native‐oxide stripe‐geometry Al _x Ga _{1− x} As‐GaAs quantum well heterostructure lasers
journal, January 1991