X-ray lithography using holographic images
Abstract
A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.
- Inventors:
-
- Berkeley, CA
- Sound Beach, NY
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 870098
- Patent Number(s):
- 5455850
- Assignee:
- Regents of Univerity of Calif. (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G - PHYSICS G03 - PHOTOGRAPHY G03H - HOLOGRAPHIC PROCESSES OR APPARATUS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- x-ray; lithography; holographic; images; non-contact; projection; method; producing; desired; image; selected; surface; x-ray-sensitive; material; photoresist; wafer; minimum; linewidths; 063; hologram; position; determined; produce; irradiated; x-rays; suitably; monochromatic; source; wavelength; lambda; on-axis; transmission; off-axis; reflection; requirements; monochromaticity; flux; brightness; reasonable; penetration; materials; produced; preferably; chosen; 13; nm; embodiment; range; 1-5; limit; linewidth; set; available; microstructure; writing; devices; electron; beam; x-ray image; selected surface; resist material; projection lithography; x-ray lithography; selected wavelength; x-ray source; electron beam; sensitive material; x-ray transmission; photoresist material; holographic image; holographic images; photoresist materials; selected wave; x-ray projection; minimum line; chromatic x-ray; rays produced; desired x-ray; /378/
Citation Formats
Howells, Malcolm R, and Jacobsen, Chris. X-ray lithography using holographic images. United States: N. p., 1995.
Web.
Howells, Malcolm R, & Jacobsen, Chris. X-ray lithography using holographic images. United States.
Howells, Malcolm R, and Jacobsen, Chris. Sun .
"X-ray lithography using holographic images". United States. https://www.osti.gov/servlets/purl/870098.
@article{osti_870098,
title = {X-ray lithography using holographic images},
author = {Howells, Malcolm R and Jacobsen, Chris},
abstractNote = {A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}