Photodetector with absorbing region having resonant periodic absorption between reflectors
Abstract
A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.
- Inventors:
-
- Boulder, CO
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869751
- Patent Number(s):
- 5389797
- Application Number:
- 07/943,823
- Assignee:
- United States of America as represented by Secretary of (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- photodetector; absorbing; region; resonant; periodic; absorption; reflectors; responsive; wavelength; wavelengths; heretofore; unrealized; cavity; structure; bounded; containing; plurality; standing; waves; therein; radiation; disposed; including; layers; spaced; apart; distance; substantially; equal; antinodes; adjacent; ones; spatially; positioned; location; enhanced; bulk; quantum; comprised; strained; layer; ingaas; individual; gaas; barrier; radiation absorption; radiation absorbing; adjacent ones; absorbing layers; absorbing region; spaced apart; barrier layer; resonant cavity; standing wave; substantially equal; strained layer; cavity structure; gaas layer; waves therein; individual ones; region disposed; ingaas layers; resonant period; absorbing layer; /257/
Citation Formats
Bryan, Robert P, Olbright, Gregory R, Brennan, Thomas M, and Tsao, Jeffrey Y. Photodetector with absorbing region having resonant periodic absorption between reflectors. United States: N. p., 1995.
Web.
Bryan, Robert P, Olbright, Gregory R, Brennan, Thomas M, & Tsao, Jeffrey Y. Photodetector with absorbing region having resonant periodic absorption between reflectors. United States.
Bryan, Robert P, Olbright, Gregory R, Brennan, Thomas M, and Tsao, Jeffrey Y. Sun .
"Photodetector with absorbing region having resonant periodic absorption between reflectors". United States. https://www.osti.gov/servlets/purl/869751.
@article{osti_869751,
title = {Photodetector with absorbing region having resonant periodic absorption between reflectors},
author = {Bryan, Robert P and Olbright, Gregory R and Brennan, Thomas M and Tsao, Jeffrey Y},
abstractNote = {A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
Works referenced in this record:
Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium
journal, October 1988
- Raja, M. Y. A.; Brueck, S. R. J.; Osiński, M.
- Applied Physics Letters, Vol. 53, Issue 18
Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector
journal, August 1990
- Ünlü, M. S.; Kishino, K.; Chyi, J‐I.
- Applied Physics Letters, Vol. 57, Issue 8