Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
Abstract
A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 868839
- Patent Number(s):
- 5225031
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; depositing; oxide; epitaxially; silicon; substrate; structures; prepared; structure; involving; utilizes; ultra; vacuum; molecular; beam; epitaxy; methods; grow; epitaxial; film; surface; grown; lattice; compound; formed; interface; stabilized; base; layer; comprised; sodium; chloride-type; grows; cover; perovskite; render; product; incorporates; electronic; capabilities; technologically-significant; properties; layer comprised; sodium chloride; silicon substrate; substrate surface; molecular beam; base layer; oxide film; lattice structure; beam epitaxy; compound formed; structures prepared; structure involving; compound form; oxide epitaxially; substrate utilize; /428/117/148/427/
Citation Formats
McKee, Rodney A, and Walker, Frederick J. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process. United States: N. p., 1993.
Web.
McKee, Rodney A, & Walker, Frederick J. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process. United States.
McKee, Rodney A, and Walker, Frederick J. Fri .
"Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process". United States. https://www.osti.gov/servlets/purl/868839.
@article{osti_868839,
title = {Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process},
author = {McKee, Rodney A and Walker, Frederick J},
abstractNote = {A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
journal, August 1991
- McKee, R. A.; Walker, F. J.; Conner, J. R.
- Applied Physics Letters, Vol. 59, Issue 7