High resolution amorphous silicon radiation detectors
Abstract
A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensionalmore »
- Inventors:
-
- Palo Alto, CA
- El Cerrito, CA
- Berkeley, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 868313
- Patent Number(s):
- 5117114
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- resolution; amorphous; silicon; radiation; detectors; detector; employing; cells; array; cell; contiguous; layers; type; intrinsic; positioned; electrodes; bias; voltage; applied; energy; conversion; layer; atop; intercepts; incident; converts; light; wavelength; responsive; read-out; device; proximate; element; allows; interrogated; independently; determine; detected; material; luminescent; columnar; structure; embodiment; column; detects; passage; therethrough; directs; beam; signal; adjacent; a-si; film; detection; confined; comb; teeth; electrode; interdigitated; capacitance; reduction; replaced; 40; percent; dimensional; arrays; x-ray; imaging; scanning; crystallography; physics; tracking; nuclear; medicine; cameras; autoradiography; radiation energy; passage therethrough; silicon cells; luminescent material; ray imaging; incident radiation; light energy; nuclear medicine; amorphous silicon; light beam; energy conversion; radiation detector; bias voltage; radiation detectors; x-ray imaging; detector element; silicon radiation; positioned proximate; detector cell; detector employing; energy physics; medicine camera; employing amorphous; silicon cell; comb structure; amorphous material; dimensional array; /250/257/
Citation Formats
Street, Robert A, Kaplan, Selig N, and Perez-Mendez, Victor. High resolution amorphous silicon radiation detectors. United States: N. p., 1992.
Web.
Street, Robert A, Kaplan, Selig N, & Perez-Mendez, Victor. High resolution amorphous silicon radiation detectors. United States.
Street, Robert A, Kaplan, Selig N, and Perez-Mendez, Victor. Wed .
"High resolution amorphous silicon radiation detectors". United States. https://www.osti.gov/servlets/purl/868313.
@article{osti_868313,
title = {High resolution amorphous silicon radiation detectors},
author = {Street, Robert A and Kaplan, Selig N and Perez-Mendez, Victor},
abstractNote = {A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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