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Title: Optical switching system and method

Abstract

An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

Inventors:
 [1];  [2];  [3]
  1. N. Tonawanda, NY
  2. Engadine, AU
  3. Salt Lake City, UT
Issue Date:
Research Org.:
Solar Energy Research Institute
OSTI Identifier:
868199
Patent Number(s):
5097357
Assignee:
University of Utah (Salt Lake City, UT)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
DOE Contract Number:  
XM-5-05009-2
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
optical; switching; method; optically; bistable; device; disclosed; uniformly; thick; layer; amorphous; silicon; constitute; fabry-perot; chamber; positioned; provide; target; probe; beam; maximum; energy; band; gap; semiconductor; preferred; embodiment; multilayer; dielectric; mirror; increase; finesse; index; refraction; material; thermally; altered; alter; transmission; multilayer dielectric; thick layer; optical switching; maximum energy; probe beam; band gap; amorphous silicon; preferred embodiment; amorphous semiconductor; energy band; optical switch; dielectric mirror; amorphous material; /359/257/

Citation Formats

Ranganathan, Radha, Gal, Michael, and Taylor, P Craig. Optical switching system and method. United States: N. p., 1992. Web.
Ranganathan, Radha, Gal, Michael, & Taylor, P Craig. Optical switching system and method. United States.
Ranganathan, Radha, Gal, Michael, and Taylor, P Craig. Wed . "Optical switching system and method". United States. https://www.osti.gov/servlets/purl/868199.
@article{osti_868199,
title = {Optical switching system and method},
author = {Ranganathan, Radha and Gal, Michael and Taylor, P Craig},
abstractNote = {An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}

Works referenced in this record:

Thermal modulation of the optical properties of amorphous semiconducting films
journal, June 1988


Chapter 3 Optical Properties of Defect States in a-Si: H
book, January 1984


Optical bistability observed in amorphous semiconductor films
journal, April 1983


Optical bistability, photonic logic, and optical computation
journal, January 1986