Apparatus for silicon web growth of higher output and improved growth stability
Abstract
This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.
- Inventors:
-
- Penn Hills, PA
- Monroeville, PA
- Issue Date:
- Research Org.:
- Jet Propulsion Laboratories
- OSTI Identifier:
- 866953
- Patent Number(s):
- 4828808
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- JPL-957207
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- apparatus; silicon; web; growth; output; improved; stability; disclosure; describes; improve; attainable; prior; configurations; modifies; heat; loss; interface; manner; minimizes; thickness; variations; especially; regions; adjacent; bounding; dendrites; unmodified; configuration; thinned; found; origin; crystal; degradation; ultimately; led; termination; according; thinning; reduced; incidence; similarly; web growth; heat loss; disclosure describes; growth interface; silicon web; thickness variation; /117/
Citation Formats
Duncan, Charles S, and Piotrowski, Paul A. Apparatus for silicon web growth of higher output and improved growth stability. United States: N. p., 1989.
Web.
Duncan, Charles S, & Piotrowski, Paul A. Apparatus for silicon web growth of higher output and improved growth stability. United States.
Duncan, Charles S, and Piotrowski, Paul A. Sun .
"Apparatus for silicon web growth of higher output and improved growth stability". United States. https://www.osti.gov/servlets/purl/866953.
@article{osti_866953,
title = {Apparatus for silicon web growth of higher output and improved growth stability},
author = {Duncan, Charles S and Piotrowski, Paul A},
abstractNote = {This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}
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