Process for growing silicon carbide whiskers by undercooling
Abstract
A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.
- Inventors:
-
- Los Alamos, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 866400
- Patent Number(s):
- 4702901
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; growing; silicon; carbide; whiskers; undercooling; method; especially; beta; form; heating; schedule; temperature; atmosphere; growth; zone; furnace; heated; cooled; below; induce; nucleation; catalyst; sites; desired; time; results; selection; silicon carbide; carbide whiskers; growth temperature; growth zone; carbide whisker; growing silicon; /423/
Citation Formats
Shalek, Peter D. Process for growing silicon carbide whiskers by undercooling. United States: N. p., 1987.
Web.
Shalek, Peter D. Process for growing silicon carbide whiskers by undercooling. United States.
Shalek, Peter D. Thu .
"Process for growing silicon carbide whiskers by undercooling". United States. https://www.osti.gov/servlets/purl/866400.
@article{osti_866400,
title = {Process for growing silicon carbide whiskers by undercooling},
author = {Shalek, Peter D},
abstractNote = {A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1987},
month = {Thu Jan 01 00:00:00 EST 1987}
}