Method and apparatus for producing high purity silicon
Abstract
A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7147066
- Application Number:
- ON: DE84011087
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-77CH00178
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; PRODUCTION; PURIFICATION; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; COPPER SILICIDES; HYDROCHLORIC ACID; SILANES; CHEMICAL COATING; COPPER COMPOUNDS; DEPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; INORGANIC ACIDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Olson, J M. Method and apparatus for producing high purity silicon. United States: N. p., 1983.
Web.
Olson, J M. Method and apparatus for producing high purity silicon. United States.
Olson, J M. Fri .
"Method and apparatus for producing high purity silicon". United States.
@article{osti_7147066,
title = {Method and apparatus for producing high purity silicon},
author = {Olson, J M},
abstractNote = {A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 27 00:00:00 EDT 1983},
month = {Fri May 27 00:00:00 EDT 1983}
}
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