Amorphous silicon radiation detectors
Abstract
Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7117776
- Patent Number(s):
- 5164809
- Application Number:
- PPN: US 7-342233
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 21 Apr 1989
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; DESIGN; AMORPHOUS STATE; CHARGED PARTICLE DETECTION; GAMMA DETECTION; SIGNAL-TO-NOISE RATIO; VISIBLE RADIATION; X-RAY DETECTION; DETECTION; ELECTROMAGNETIC RADIATION; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
Citation Formats
Street, R A, Perez-Mendez, V, and Kaplan, S N. Amorphous silicon radiation detectors. United States: N. p., 1992.
Web.
Street, R A, Perez-Mendez, V, & Kaplan, S N. Amorphous silicon radiation detectors. United States.
Street, R A, Perez-Mendez, V, and Kaplan, S N. Tue .
"Amorphous silicon radiation detectors". United States.
@article{osti_7117776,
title = {Amorphous silicon radiation detectors},
author = {Street, R A and Perez-Mendez, V and Kaplan, S N},
abstractNote = {Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 17 00:00:00 EST 1992},
month = {Tue Nov 17 00:00:00 EST 1992}
}