Hard carbon nitride and method for preparing same
Abstract
Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7072508
- Patent Number(s):
- 5110679
- Application Number:
- PPN: US 7-513245
- Assignee:
- Univ. of California, Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 24 Apr 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CARBON NITRIDES; PHYSICAL VAPOR DEPOSITION; CONTROLLED ATMOSPHERES; CRYSTAL STRUCTURE; SPUTTERING; ATMOSPHERES; CARBON COMPOUNDS; DEPOSITION; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Haller, E E, Cohen, M L, and Hansen, W L. Hard carbon nitride and method for preparing same. United States: N. p., 1992.
Web.
Haller, E E, Cohen, M L, & Hansen, W L. Hard carbon nitride and method for preparing same. United States.
Haller, E E, Cohen, M L, and Hansen, W L. Tue .
"Hard carbon nitride and method for preparing same". United States.
@article{osti_7072508,
title = {Hard carbon nitride and method for preparing same},
author = {Haller, E E and Cohen, M L and Hansen, W L},
abstractNote = {Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 05 00:00:00 EDT 1992},
month = {Tue May 05 00:00:00 EDT 1992}
}
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