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Title: Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Abstract

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
7014915
Patent Number(s):
6059365
Assignee:
SNL; ERA-14-001156; EDB-88-184977
Patent Classifications (CPCs):
A - HUMAN NECESSITIES A47 - FURNITURE A47C - CHAIRS
A - HUMAN NECESSITIES A61 - MEDICAL OR VETERINARY SCIENCE A61G - TRANSPORT, PERSONAL CONVEYANCES, OR ACCOMMODATION SPECIALLY ADAPTED FOR PATIENTS OR DISABLED PERSONS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM ARSENIDES; SUPERLATTICES; GALLIUM ARSENIDES; INDIUM ARSENIDES; ELECTRON-HOLE COUPLING; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; INVENTIONS; LAYERS; SEMICONDUCTOR DEVICES; VELOCITY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES; TRANSISTORS; 360602* - Other Materials- Structure & Phase Studies; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Chaffin, R J, Dawson, L R, Fritz, I J, Osbourn, G C, and Zipperian, T E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States: N. p., 1987. Web.
Chaffin, R J, Dawson, L R, Fritz, I J, Osbourn, G C, & Zipperian, T E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States.
Chaffin, R J, Dawson, L R, Fritz, I J, Osbourn, G C, and Zipperian, T E. Mon . "Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields". United States.
@article{osti_7014915,
title = {Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields},
author = {Chaffin, R J and Dawson, L R and Fritz, I J and Osbourn, G C and Zipperian, T E},
abstractNote = {A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jun 08 00:00:00 EDT 1987},
month = {Mon Jun 08 00:00:00 EDT 1987}
}

Patent:
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