Silicon crystal growing by oscillating crucible technique
Abstract
A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6928048
- Application Number:
- ON: DE84011038
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AI01-76ET20356
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CRYSTAL GROWTH METHODS; SILICON; CRUCIBLES; ROTATION; ELEMENTS; MOTION; SEMIMETALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Schwuttke, G H, Kim, K M, and Smetana, P. Silicon crystal growing by oscillating crucible technique. United States: N. p., 1983.
Web.
Schwuttke, G H, Kim, K M, & Smetana, P. Silicon crystal growing by oscillating crucible technique. United States.
Schwuttke, G H, Kim, K M, and Smetana, P. Wed .
"Silicon crystal growing by oscillating crucible technique". United States.
@article{osti_6928048,
title = {Silicon crystal growing by oscillating crucible technique},
author = {Schwuttke, G H and Kim, K M and Smetana, P},
abstractNote = {A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Aug 03 00:00:00 EDT 1983},
month = {Wed Aug 03 00:00:00 EDT 1983}
}
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