Solid source MOCVD system
Abstract
A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metallorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition. 13 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 675867
- Patent Number(s):
- 5820678
- Application Number:
- PAN: 8-865,827
- Assignee:
- Univ. of California, Los Alamos, NM (United States)
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 13 Oct 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; OXIDES; PRECURSOR; CHEMICAL REACTORS; FABRICATION; HIGH-TC SUPERCONDUCTORS
Citation Formats
Hubert, B N, and Wu, X D. Solid source MOCVD system. United States: N. p., 1998.
Web.
Hubert, B N, & Wu, X D. Solid source MOCVD system. United States.
Hubert, B N, and Wu, X D. Tue .
"Solid source MOCVD system". United States.
@article{osti_675867,
title = {Solid source MOCVD system},
author = {Hubert, B N and Wu, X D},
abstractNote = {A system for MOCVD fabrication of superconducting and non-superconducting oxide films provides a delivery system for the feeding of metallorganic precursors for multi-component chemical vapor deposition. The delivery system can include multiple cartridges containing tightly packed precursor materials. The contents of each cartridge can be ground at a desired rate and fed together with precursor materials from other cartridges to a vaporization zone and then to a reaction zone within a deposition chamber for thin film deposition. 13 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 13 00:00:00 EDT 1998},
month = {Tue Oct 13 00:00:00 EDT 1998}
}