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Title: Magnetron sputtered boron films

Abstract

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672609
Patent Number(s):
5766747
Application Number:
PAN: 8-334,090
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 16 Jun 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; BORON; SPUTTERING; SURFACE COATING; AMORPHOUS STATE; USES

Citation Formats

Makowiecki, D M, and Jankowski, A F. Magnetron sputtered boron films. United States: N. p., 1998. Web.
Makowiecki, D M, & Jankowski, A F. Magnetron sputtered boron films. United States.
Makowiecki, D M, and Jankowski, A F. Tue . "Magnetron sputtered boron films". United States.
@article{osti_672609,
title = {Magnetron sputtered boron films},
author = {Makowiecki, D M and Jankowski, A F},
abstractNote = {A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 16 00:00:00 EDT 1998},
month = {Tue Jun 16 00:00:00 EDT 1998}
}

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