Method for processing silicon solar cells
Abstract
The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 504929
- Patent Number(s):
- 5627081
- Application Number:
- PAN: 8-346,010
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 6 May 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; SOLAR PROCESS HEAT; FABRICATION; SOLAR FURNACES; SILICON; MATERIALS WORKING; TEXTURE; GETTERING; PASSIVATION; USES
Citation Formats
Tsuo, Y S, Landry, M D, and Pitts, J R. Method for processing silicon solar cells. United States: N. p., 1997.
Web.
Tsuo, Y S, Landry, M D, & Pitts, J R. Method for processing silicon solar cells. United States.
Tsuo, Y S, Landry, M D, and Pitts, J R. Tue .
"Method for processing silicon solar cells". United States.
@article{osti_504929,
title = {Method for processing silicon solar cells},
author = {Tsuo, Y S and Landry, M D and Pitts, J R},
abstractNote = {The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 06 00:00:00 EDT 1997},
month = {Tue May 06 00:00:00 EDT 1997}
}
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