Unitary lens semiconductor device
Abstract
A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 489103
- Patent Number(s):
- 5633527
- Application Number:
- PAN: 8-384,089
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 27 May 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; LAYERS; DESIGN; SEMICONDUCTOR LASERS; LIGHT EMITTING DIODES; PHOTODETECTORS; SEMICONDUCTOR MATERIALS
Citation Formats
Lear, K L. Unitary lens semiconductor device. United States: N. p., 1997.
Web.
Lear, K L. Unitary lens semiconductor device. United States.
Lear, K L. Tue .
"Unitary lens semiconductor device". United States.
@article{osti_489103,
title = {Unitary lens semiconductor device},
author = {Lear, K L},
abstractNote = {A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 27 00:00:00 EDT 1997},
month = {Tue May 27 00:00:00 EDT 1997}
}
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