Visible-wavelength semiconductor lasers and arrays
Abstract
The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 372597
- Patent Number(s):
- 5557627
- Application Number:
- PAN: 8-444,462
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 17 Sep 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; DESIGN; VISIBLE RADIATION; INDIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; GALLIUM PHOSPHIDES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; LASER RADIATION
Citation Formats
Schneider, Jr, R P, and Crawford, M H. Visible-wavelength semiconductor lasers and arrays. United States: N. p., 1996.
Web.
Schneider, Jr, R P, & Crawford, M H. Visible-wavelength semiconductor lasers and arrays. United States.
Schneider, Jr, R P, and Crawford, M H. Tue .
"Visible-wavelength semiconductor lasers and arrays". United States.
@article{osti_372597,
title = {Visible-wavelength semiconductor lasers and arrays},
author = {Schneider, Jr, R P and Crawford, M H},
abstractNote = {The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 17 00:00:00 EDT 1996},
month = {Tue Sep 17 00:00:00 EDT 1996}
}