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Title: Gallium nitride junction field-effect transistor

Abstract

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321296
Patent Number(s):
5866925
Application Number:
PAN: 8-781,068
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 2 Feb 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ION IMPLANTATION; GALLIUM NITRIDES; FIELD EFFECT TRANSISTORS; FABRICATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHORUS IONS

Citation Formats

Zolper, J C, and Shul, R J. Gallium nitride junction field-effect transistor. United States: N. p., 1999. Web.
Zolper, J C, & Shul, R J. Gallium nitride junction field-effect transistor. United States.
Zolper, J C, and Shul, R J. Tue . "Gallium nitride junction field-effect transistor". United States.
@article{osti_321296,
title = {Gallium nitride junction field-effect transistor},
author = {Zolper, J C and Shul, R J},
abstractNote = {An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 02 00:00:00 EST 1999},
month = {Tue Feb 02 00:00:00 EST 1999}
}

Patent:
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Works referenced in this record:

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
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High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
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Plasma Chemistry Dependent ECR Etching of GaN
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Microwave performance of GaN MESFETs
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Ion‐implanted GaN junction field effect transistor
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Metal semiconductor field effect transistor based on single crystal GaN
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An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications
journal, July 1994


Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
journal, December 1994


Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994


P- and N-type implantation doping of GaN with Ca and O
report, May 1996


Ion Implantation For High Performance Ill-V Jfets And Hfets
journal, January 1996


Ion implantation doping and isolation of GaN
journal, September 1995


An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact
journal, July 1994