Crystallization from high temperature solutions of Si in Cu/Al solvent
Abstract
A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 288029
- Patent Number(s):
- 5544616
- Application Number:
- PAN: 8-249,957
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 13 Aug 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON; LIQUID PHASE EPITAXY; CRYSTAL GROWTH; COPPER; IMPURITIES; ALUMINIUM; PRECIPITATION
Citation Formats
Ciszek, T. F., and Wang, T. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States: N. p., 1996.
Web.
Ciszek, T. F., & Wang, T. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States.
Ciszek, T. F., and Wang, T. Tue .
"Crystallization from high temperature solutions of Si in Cu/Al solvent". United States.
@article{osti_288029,
title = {Crystallization from high temperature solutions of Si in Cu/Al solvent},
author = {Ciszek, T. F. and Wang, T.},
abstractNote = {A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 13 00:00:00 EDT 1996},
month = {Tue Aug 13 00:00:00 EDT 1996}
}
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