Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}
Abstract
An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 27736
- Patent Number(s):
- 31968
- Application Number:
- PAN: 6-620,637
- Assignee:
- Boeing Co., Seattle, WA (United States)
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Resource Relation:
- Other Information: DN: Reissue of US Pat. No. 4,335,266, which was issued Jun. 15, 1982; PBD: 13 Aug 1985
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SOLAR CELLS; DESIGN; FABRICATION; ENERGY EFFICIENCY; VACUUM COATING; P-N JUNCTIONS; N-TYPE CONDUCTORS
Citation Formats
Mickelsen, R A, and Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}. United States: N. p., 1985.
Web.
Mickelsen, R A, & Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}. United States.
Mickelsen, R A, and Chen, W S. Tue .
"Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}". United States.
@article{osti_27736,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}},
author = {Mickelsen, R A and Chen, W S},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 13 00:00:00 EDT 1985},
month = {Tue Aug 13 00:00:00 EDT 1985}
}