Method for accurate growth of vertical-cavity surface-emitting lasers
Abstract
The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.
- Inventors:
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 27717
- Patent Number(s):
- 5397739
- Application Number:
- PAN: 8-099,035
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 14 Mar 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; SEMICONDUCTOR MATERIALS; PROCESS CONTROL
Citation Formats
Chalmers, S A, Killeen, K P, and Lear, K L. Method for accurate growth of vertical-cavity surface-emitting lasers. United States: N. p., 1995.
Web.
Chalmers, S A, Killeen, K P, & Lear, K L. Method for accurate growth of vertical-cavity surface-emitting lasers. United States.
Chalmers, S A, Killeen, K P, and Lear, K L. Tue .
"Method for accurate growth of vertical-cavity surface-emitting lasers". United States.
@article{osti_27717,
title = {Method for accurate growth of vertical-cavity surface-emitting lasers},
author = {Chalmers, S A and Killeen, K P and Lear, K L},
abstractNote = {The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EST 1995},
month = {Tue Mar 14 00:00:00 EST 1995}
}
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