Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices
Abstract
A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Purdue Univ., West Lafayette, IN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2222277
- Patent Number(s):
- 11746437
- Application Number:
- 17/555,660
- Assignee:
- Purdue Research Foundation (West Lafayette, IN)
- DOE Contract Number:
- NA0003525; SC0020077
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/20/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wang, Haiyan, Paldi, Robynn-Lynne, and Siddiqui, Aleem. Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices. United States: N. p., 2023.
Web.
Wang, Haiyan, Paldi, Robynn-Lynne, & Siddiqui, Aleem. Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices. United States.
Wang, Haiyan, Paldi, Robynn-Lynne, and Siddiqui, Aleem. Tue .
"Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices". United States. https://www.osti.gov/servlets/purl/2222277.
@article{osti_2222277,
title = {Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices},
author = {Wang, Haiyan and Paldi, Robynn-Lynne and Siddiqui, Aleem},
abstractNote = {A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 05 00:00:00 EDT 2023},
month = {Tue Sep 05 00:00:00 EDT 2023}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition
journal, August 2002
- Ye, Zhizhen; He, Junhui; Ye, Longfei
- Materials Letters, Vol. 55, Issue 4
Epitaxial growth of LiNbO 3 thin films by excimer laser ablation method and their surface acoustic wave properties
journal, August 1992
- Shibata, Yoshihiko; Kaya, Kiyoshi; Akashi, Kageyasu
- Applied Physics Letters, Vol. 61, Issue 8
Pulsed-Laser Deposition of LiNbO3 in Low Gas Pressure Using Pure Ozone
journal, August 2004
- Tsukada, Ichiro; Higuchi, Sadao
- Japanese Journal of Applied Physics, Vol. 43, Issue 8R