Title: Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device

Abstract

A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Inventors:

O'Loughlin, Michael John; Cheng, Lin; Burk, Jr., Albert Augustus; Agarwal, Anant Kumar; Suvorov, Alexander

Issue Date:

Tue Jan 21 00:00:00 EST 2020

Research Org.:

Cree, Inc., Durham, NC (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1632478

Patent Number(s):

10541306

Application Number:

13/610,993

Assignee:

Cree, Inc. (Durham, NC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02664 - {Aftertreatments
H01L21/26506 - {in group IV semiconductors}
H01L21/26513 - {of electrically active species}
H01L21/322 - to modify their internal properties, e.g. to produce internal imperfections
H01L29/1608 - {Silicon carbide}

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DOE Contract Number:  

AR0000110

Resource Type:

Patent

Resource Relation:

Patent File Date: 09/12/2012

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE