Tin selenide single crystals for thermoelectric applications

Kanatzidis, Mercouri G.; Zhao, Li-Dong

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Title: Tin selenide single crystals for thermoelectric applications

Abstract

Thermoelectric materials and thermoelectric cells and devices incorporating the thermoelectric materials are provided. Also provided are methods of using the cells and devices to generate electricity and to power external electronic devices. The thermoelectric materials comprise SnSe single crystals, including hole doped SnSe single crystals.

Inventors:: Kanatzidis, Mercouri G.; Zhao, Li-Dong

Issue Date:: Tue Jun 19 00:00:00 EDT 2018

Research Org.:: Northwestern Univ., Evanston, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1458528

Patent Number(s):: 10002998

Application Number:: 14/823,738

Assignee:: Northwestern University (Evanston, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B19/007 - {Tellurides or selenides of metals

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DOE Contract Number:: SC0001054

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Aug 11

Country of Publication:: United States

Language:: English

Citation Formats


                    Kanatzidis, Mercouri G., and Zhao, Li-Dong. Tin selenide single crystals for thermoelectric applications.  United States: N. p., 2018. 
        Web.

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                    Kanatzidis, Mercouri G., & Zhao, Li-Dong. Tin selenide single crystals for thermoelectric applications.  United States.

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                    Kanatzidis, Mercouri G., and Zhao, Li-Dong. Tue .  
        "Tin selenide single crystals for thermoelectric applications".  United States.  https://www.osti.gov/servlets/purl/1458528.

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@article{osti_1458528,

  title        = {Tin selenide single crystals for thermoelectric applications},

  author       = {Kanatzidis, Mercouri G. and Zhao, Li-Dong},

  abstractNote = {Thermoelectric materials and thermoelectric cells and devices incorporating the thermoelectric materials are provided. Also provided are methods of using the cells and devices to generate electricity and to power external electronic devices. The thermoelectric materials comprise SnSe single crystals, including hole doped SnSe single crystals.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jun 19 00:00:00 EDT 2018},

  month        = {Tue Jun 19 00:00:00 EDT 2018}

}

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Works referenced in this record:

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patent, December 2010

Kanatzidis, Mercouri G.; Androulakis, John; Sootsman, Joseph R.
US Patent Document 7,847,179
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Thermoelectrics compositions comprising nanoscale inclusions in a chalcogenide matrix
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Kanatzidis, Mercouri G.; Zhang, Qichun; Girard, Steven N.
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Self-assembled quantum dot superlattice thermoelectric materials and devices
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Harman, Theodore C.; Taylor, Patrick J.; Walsh, Michael P.
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Large-area nanoenabled macroelectronic substrates and uses therefor
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Duan, Xiangfeng; Niu, Chunming; Empedocles, Stephen
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Thermoelectrics Compositions Comprising Nanoscale Inclusions in a Chalcogenide Matrix
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Kanatzidis, Mercouri G.; Zhang, Qichun; Girard, Steven N.
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High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites
patent-application, June 2012

Snyder, G. Jeffrey; Pei, Yanzhong
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SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry
journal, July 2010

Baumgardner, William J.; Choi, Joshua J.; Lim, Yee-Fun
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Neutron diffraction study of the structural phase transition in SnS and SnSe
journal, January 1986

Chattopadhyay, T.; Pannetier, J.; Von Schnering, H. G.
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Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
journal, January 2014

Chen, Cheng-Lung; Wang, Heng; Chen, Yang-Yuan
Journal of Materials Chemistry A, Vol. 2, Issue 29, p. 11171-11176
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Assessment of the thermoelectric performance of polycrystalline p-type SnSe
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Sassi, S.; Candolfi, C.; Vaney, J.-B.
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Growth and electronic properties of the SnSe semiconductor
journal, August 1981

Yu, J. G.; Yue, A. S.; Stafsudd, O. M.
Journal of Crystal Growth, Vol. 54, Issue 2, p. 248-252
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Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
journal, April 2014

Zhao, Li-Dong; Lo, Shih-Han; Zhang, Yongsheng
Nature, Vol. 508, Issue 7496, p. 373-377
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High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds
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Ding, Guangqian; Gao, Guoying; Yao, Kailun
Scientific Reports, Vol. 5, Article No. 9567
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Wasscher, J. D.; Albers, W.; Haas, C.
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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
journal, November 2015

Zhao, L.-D.; Tan, G.; Hao, S.
Science, Vol. 351, Issue 6269, p. 141-144
https://doi.org/10.1126/science.aad3749

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Similar Records

Title: Tin selenide single crystals for thermoelectric applications

Abstract

Citation Formats

Thermoelectric compositions and process patent, December 2010

Thermoelectrics compositions comprising nanoscale inclusions in a chalcogenide matrix patent, July 2014

Self-assembled quantum dot superlattice thermoelectric materials and devices patent-application, June 2004

Large-area nanoenabled macroelectronic substrates and uses therefor patent-application, August 2005

Thermoelectrics Compositions Comprising Nanoscale Inclusions in a Chalcogenide Matrix patent-application, March 2011

High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites patent-application, June 2012

SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry journal, July 2010

Neutron diffraction study of the structural phase transition in SnS and SnSe journal, January 1986

Thermoelectric properties of p-type polycrystalline SnSe doped with Ag journal, January 2014

Assessment of the thermoelectric performance of polycrystalline p-type SnSe journal, May 2014

Growth and electronic properties of the SnSe semiconductor journal, August 1981

Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals journal, April 2014

High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds journal, June 2015

Simple evaluation of the maximum thermoelectric figure of merit, with application to mixed crystals SnS1-xSex journal, May 1963

Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe journal, November 2015

Thermoelectric compositions and process
patent, December 2010

Thermoelectrics compositions comprising nanoscale inclusions in a chalcogenide matrix
patent, July 2014

Self-assembled quantum dot superlattice thermoelectric materials and devices
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Large-area nanoenabled macroelectronic substrates and uses therefor
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Thermoelectrics Compositions Comprising Nanoscale Inclusions in a Chalcogenide Matrix
patent-application, March 2011

High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites
patent-application, June 2012

SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry
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Neutron diffraction study of the structural phase transition in SnS and SnSe
journal, January 1986

Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
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Assessment of the thermoelectric performance of polycrystalline p-type SnSe
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Growth and electronic properties of the SnSe semiconductor
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High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds
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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
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