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Title: Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

Abstract

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1295657
Patent Number(s):
9418814
Application Number:
14/594,949
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC02-06CH11357; SC0009572
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Sumant, Anirudha V., Baryshev, Sergey V., and Antipov, Sergey P. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond. United States: N. p., 2016. Web.
Sumant, Anirudha V., Baryshev, Sergey V., & Antipov, Sergey P. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond. United States.
Sumant, Anirudha V., Baryshev, Sergey V., and Antipov, Sergey P. Tue . "Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond". United States. https://www.osti.gov/servlets/purl/1295657.
@article{osti_1295657,
title = {Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond},
author = {Sumant, Anirudha V. and Baryshev, Sergey V. and Antipov, Sergey P.},
abstractNote = {A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 16 00:00:00 EDT 2016},
month = {Tue Aug 16 00:00:00 EDT 2016}
}

Works referenced in this record:

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  • PĂ©rez Quintero, Kenneth J.; Antipov, Sergey; Sumant, Anirudha V.
  • Applied Physics Letters, Vol. 105, Issue 12, Article No. 123103
  • https://doi.org/10.1063/1.4896418

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Polycrystalline diamond films as prospective UV photocathodes
conference, December 2000