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Title: Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

Abstract

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California (United States)
OSTI Identifier:
119047
Patent Number(s):
5456763
Application Number:
PAN: 8-219,487
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 10 Oct 1995
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; FABRICATION; SILICON; MELTING; CRYSTALLIZATION; TEMPERATURE CONTROL

Citation Formats

Kaschmitter, J L, and Sigmon, T W. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon. United States: N. p., 1995. Web.
Kaschmitter, J L, & Sigmon, T W. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon. United States.
Kaschmitter, J L, and Sigmon, T W. Tue . "Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon". United States.
@article{osti_119047,
title = {Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon},
author = {Kaschmitter, J L and Sigmon, T W},
abstractNote = {A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 10 00:00:00 EDT 1995},
month = {Tue Oct 10 00:00:00 EDT 1995}
}

Patent:
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