Wet-chemical systems and methods for producing black silicon substrates
Abstract
A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1179804
- Patent Number(s):
- 9034216
- Application Number:
- 13/825,541
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Yost, Vernon, Yuan, Hao-Chih, and Page, Matthew. Wet-chemical systems and methods for producing black silicon substrates. United States: N. p., 2015.
Web.
Yost, Vernon, Yuan, Hao-Chih, & Page, Matthew. Wet-chemical systems and methods for producing black silicon substrates. United States.
Yost, Vernon, Yuan, Hao-Chih, and Page, Matthew. Tue .
"Wet-chemical systems and methods for producing black silicon substrates". United States. https://www.osti.gov/servlets/purl/1179804.
@article{osti_1179804,
title = {Wet-chemical systems and methods for producing black silicon substrates},
author = {Yost, Vernon and Yuan, Hao-Chih and Page, Matthew},
abstractNote = {A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 19 00:00:00 EDT 2015},
month = {Tue May 19 00:00:00 EDT 2015}
}
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